introduction to dislocations

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Introduction To Dislocations

Author : Derek Hull
ISBN : 008096673X
Genre : Technology & Engineering
File Size : 47. 45 MB
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In materials science, dislocations are irregularities within the crystal structure or atomic scale of engineering materials, such as metals, semi-conductors, polymers, and composites. Discussing this specific aspect of materials science and engineering, Introduction to Dislocations is a key resource for students. The book provides students and practitioners with the fundamental principles required to understand dislocations. Comprised of 10 chapters, the text includes advanced computer modeling and very high-resolution electron microscopy to help readers better understand the structure of atoms close to the core of dislocations. It shows that atomic arrangement has a significant effect on the formation of dislocations and thereby on the properties of solids. The first two chapters of the book present an overview of dislocations. The crystal structures and the various defects and dislocations are discussed, and methods of observation and diagnosis of dislocations are covered. Chapters 3 to 5 discuss the behavior of dislocations and explain how changes in the structure and arrangement of atoms can affect the behavior of dislocations. The three chapters also discuss the mechanical properties of dislocations. The remaining chapters offer a detailed discussion of the mechanisms of dislocations and the mechanical strength of crystalline solids. The book is written for undergraduate- and graduate-level students in both materials science and mechanical engineering. Non-experts and novices working on mechanical properties, mechanisms of deformation and fracture, and properties of materials, as well as industrial and academic researchers, will find this book invaluable. Long-established academic reference by an expert author team, highly regarded for their contributions to the field. Uses minimal mathematics to present theory and applications in a detailed yet easy-to-read manner, making this an understandable introduction to a complex topic. Unlike the main competition, this new edition includes recent developments in the subject and up-to-date references to further reading and research sources.

Introduction To Dislocations

Author : Derek Hull
ISBN : 0080287212
Genre : Dislocations in crystals
File Size : 53. 3 MB
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Computer Simulations Of Dislocations

Author : Vasily Bulatov
ISBN : 9780198526148
Genre : Computers
File Size : 54. 70 MB
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The book presents a variety of methods for computer simulations of crystal defects in the form of "numerical recipes", complete with computer codes and analysis tools. By working through numerous case studies and problems, this book provides a useful starter kit for further method development in the computational materials sciences.

Language And Masculinities

Author : Tommaso M. Milani
ISBN : 9781317638926
Genre : Language Arts & Disciplines
File Size : 32. 79 MB
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This volume showcases cutting-edge research in the linguistic and discursive study of masculinities, comprising the first significant edited collection on language and masculinities since Johnson and Meinhof’s 1997 volume. Overall, the chapters are linked together by a critical analytical perspective that seeks to understand the relationships between discourse, masculinities, and power. Whereas some of the chapters offer detailed, linguistically informed critiques of the ways in which old and new expressions of masculinities are complicit in the reproduction of men’s hegemonic positions of power, others provide a more complex picture, one in which collusion and subversion go hand in hand. Contributions argue for the need for research on language and masculinities to expand its remit so as to engage with "gay masculinities," and unsettle gendered categories in order to consider the ways in which women, transgender, and intersex individuals also perform a variety of masculinities. Finally, unlike Johnson and Meinhof’s 1997 collection, this volume not only offers a wider—and perhaps "queerer" perspective—on the study of language and masculinities, but also covers a broader geographical and socio-cultural spectrum, including work on Brazil, Israel, New Zealand, Singapore, and South Africa.

Introduction To Anisotropic Elasticity Theory Of Dislocations

Author : John Wickham Steeds
ISBN : UOM:39015008084074
Genre : Science
File Size : 62. 14 MB
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Solid State Ionic Devices 5

Author : E. D. Wachsman
ISBN : 9781566776745
Genre : Science
File Size : 39. 62 MB
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Solid-state electrochemical devices, such as batteries, fuel cells, membranes, and sensors, are becoming pervasive in our technologically driven lifestyles. The development of these devices involves common research themes such as ion transport, interfacial phenomena, and device design and performance, regardless of the class of materials or whether the solid state is amorphous or crystalline. However, results of recent research in this field tend to be presented in symposia separated along the lines of particular solidstate materials disciplines rather than by phenomena controlling device performance. The papers in this issue of ECS Transactions were presented at the fifth of a series in international symposia "Solid-State Ionic Devices V", at the 212th Electrochemical Society Meeting, in Washington DC, October 7-12, 2007. The intent of the symposia was to provide a forum for current advances in ionically conducting materials and devices that is organized along phenomenological lines, rather than by specific material discipline. The papers in this issue range from the fundamentals of ionic and mixed ionic-electronic transport to device performance and are in keeping with that intent.

The Anthropology Of Corporate Social Responsibility

Author : Catherine Dolan
ISBN : 9781785330728
Genre : Social Science
File Size : 63. 40 MB
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The Anthropology of Corporate Social Responsibility explores the meanings, practices, and impact of corporate social and environmental responsibility across a range of transnational corporations and geographical locations (Bangladesh, Cameroon, Chile, the Democratic Republic of the Congo, Ghana, India, Peru, South Africa, the UK, and the USA). The contributors examine the expectations, frictions and contradictions the CSR movement is generating and addressing key issues such as the introduction of new forms of management, control, and discipline through ethical and environmental governance or the extent to which corporate responsibility challenges existing patterns of inequality rather than generating new geographies of inclusion and exclusion.

Stress And Strain In Epitaxy Theoretical Concepts Measurements And Applications

Author : J.-P. Deville
ISBN : 9780080541860
Genre : Science
File Size : 82. 49 MB
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This book contains keynote lectures which have been delivered at the 3rd Porquerolles' School on Surface Science, SIR2000 (Surfaces-Interfaces-Relaxation). The aim of this school was to review the main concepts necessary to understand the role of interfacial stress, strain and relaxation in crystal growth by heteroepitaxy. By bringing together scientists from various fields (physics, chemistry, materials science and engineering) which daily use complementary methodological approaches (experiment, theory, modelization), the school allowed to offer 11 multidisciplinary courses. This book addresses the state of art of stress in epitaxial materials, it describes the various methods to measure the atomic displacement and stress fields, it reviews the spectroscopic methods necessary to map the interface chemistry, it details the theoretical methods and concepts which are needed to predict them and it questions the fact that stress and relaxation can induce specific properties in magnetism, catalysis, electron transport and so on. The field of stress and strain in heteroepitaxy has know large developments during the last ten years. New techniques have been used to set up new devices in which functionalities are obtained through structuration at a nanometer scale. Large-scale integration and reduced dimensions are the key factors to optimize the achievements of these devices. Already used in industry (quantum wells, magnetic sensors), these devices are obtained by molecular beam epitaxy, sputtering or pulsed laser deposition. Their reduced dimensionality increased the number of surfaces and interfaces, the role of which has to be precised. Experimentalists try now to associate materials having very different crystal structure and chemical composition. The elastic stress stored in the device can induce various phenomena which have to be evaluated, understood and predicted. The book intends also to show that many questions are still in debate.

Fundamentals Of Radiation Materials Science

Author : Gary S. Was
ISBN : 9783540494720
Genre : Technology & Engineering
File Size : 65. 96 MB
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This book is an eye-opening treatise on the fundamentals of the effects of radiation on metals and alloys. When energetic particles strike a solid, numerous processes occur that can change the physical and mechanical properties of the material. Metals and alloys represent an important class of materials that are subject to intense radiation fields. Radiation causes metals and alloys to swell, distort, blister, harden, soften and deform. This textbook and reference covers the basics of particle-atom interaction for a range of particle types, the amount and spatial extent of the resulting radiation damage, the physical effects of irradiation and the changes in mechanical behavior of irradiated metals and alloys.

Thin Films

Author : W. K. Liu
ISBN : 9810233906
Genre : Technology & Engineering
File Size : 47. 87 MB
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Heteroepitaxial films are commonplace among today's electronic and photonic devices. The realization of new and better devices relies on the refinement of epitaxial techniques and improved understanding of the physics underlying epitaxial growth. This book provides an up-to-date report on a wide range of materials systems. The first half reviews metallic and dielectric thin films, including chapters on metals, rare earths, metal-oxide layers, fluorides, and high-c superconductors. The second half covers semiconductor systems, reviewing developments in group-IV, arsenide, phosphide, antimonide, nitride, II-VI and IV-VI heteroepitaxy. Topics important to several systems are covered in chapters on atomic processes, ordering and growth dynamics.

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